钛酸钡基阻变存储单元的构建及其特性

Construction and characteristics of barium titanate based resistive random-acess memory

采用磁控溅射在低阻态Si(100)衬底上制备均匀的钛酸钡(BTO)薄膜,通过磁控溅射制备Ag电极,构建Si(100)/BTO/Ag阻变存储单元。利用XRD,SEM和AFM对不同退火温度和保温时间下的BTO薄膜结构和形貌进行表征,利用数字源表对Si(100)/BTO/Ag阻变存储单元进行阻变性能测试。结果表明,退火温度750℃、保温0.5 h条件下制备的BTO薄膜结晶度最高,薄膜表面晶体颗粒呈均匀分布,构建的Si(100)/BTO/Ag阻变存储单元阻变性能最佳,呈现典型的双极性开关效应。

Barium titanate(BTO)thin films were prepared by magnetron sputtering on low-resistance Si(100)substrates.Ag electrodes were prepared by magnetron sputtering,and Si(100)/BTO/Ag resistive random-acess memory was successfully constructed.The structure and morphology of BTO films at different annealing temperatures and holding times were characterized by XRD,SEM and AFM.The resistive switching properties of Si(100)/BTO/Ag resistive random-acess memory were tested by digital source table.The results showed that the BTO film prepared by annealing at 750℃for 0.5 h has the highest crystallinity,and the crystal particles on the surface of the film are evenly distributed.The constructed Si(100)/BTO/Ag resistive random-acess memory has the best resistive switching performance,showing a typical bipolar switching effect.