基于GaAs pHEMT工艺的C波段低噪声放大器设计

Design of C-band Low Noise Amplifier Based on GaAs pHEMT Process

本文提出一款两级C波段(4-8 GHz)低噪声放大器(LNA)。电路中采用了电感退化拓扑与并联RLC负反馈结构,对电路的输入阻抗进行补偿,从而降低输入匹配的难度,提高了功率转换效率;并通过设计最佳噪声源阻抗点,在实现最佳噪声匹配同时,实现了较好的输入输出回波性能与增益平坦度。文中提出的LNA采用基于GaAs pHEMT工艺研制,测试结果表明,在工作频段内,电路的小信号增益为14.7±0.5 dB,最大噪声系数1.9 dB。

In this paper,a two-stage C band(4-8GHz)low noise amplifier(LNA)is designed byusing the GaAs pHEMT process.Inductive degradation topology and parallel RLC negative feedback structure are added to the circuit to compensate for the input impedance of the circuit,thereby reduces the difficulty of input matching and improves power conversion efficiency.Through the design of optimal noise source impedance points,better input/output echo performance and gain flatness are achieved while achieving optimal noise matching.The test results indicate that within the operating frequency band,the small signal gain of the circuit is 14.7±0.5 dB,and the maximum noise coefficient is 1.9 dB.