基于准二维钙钛矿的高稳定电阻随机存储器

Strongly stable resistive random access memory based on quasi-two-dimensional perovskites

电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层的Al/(PEA)_(2)-MAPb_(2)I_(3)Br_(4)/SnO_(2)/氧化铟锡(ITO)非易失性RRAM,该器件表现出了出色且高度稳定的双极性电阻切换特性.此外,该器件表现出约为10~4的开/关比,低SET电压(约0.8 V),并且具有相对稳定的耐久性(大于1000次循环).高阻态和低阻态的传导机制分别是空间电荷限流传导和欧姆传导.此外,由于苯乙胺分子的疏水性,该器件在40%湿度下放置90天依然表现出显著的阻变特性.因此,这种高性能、稳定的RRAM为未来存储器的商业化提供了可能性.

Resistive random access memory(RRAM) has been regarded as a challenging alternative for emerging memory technologies. In recent years, organic-inorganic hybrid halide prerovskite-based RRAMs have been found to have superior storage properties. In this work, an Al/(PEA)_(2)-MAPb_(2)I_(3)Br_(4)/SnO_(2)/indium tin oxide nonvolatile RRAM demonstrated outstanding and highly stable bipolar resistance switching characteristics, which was prepared with a quasitwo-dimensional perovskite active layer using a simple onestep spin-casting strategy in air without antisolvent. In addition, the device showed an on/off ratio of approximately 10~4, a low set voltage(~0.8 V), and a relatively stable endurance(>1000 cycles). The conduction mechanisms of the high-and low-resistance states were space-charge-limited-current conduction and Ohmic conduction, respectively. Moreover, owing to the hydrophobicity of the phenethylamine molecule, the device exhibited notable resistive characteristics at 40% humidity for more than 90 days. Thus, this high-performance and stable RRAM offers unlimited prospects for future memory commercialization.