摘要
高过载冲击试验成本高、周期长,同时失效检测手段较少,难以定位结构薄弱点。针对体硅工艺MEMS(Micro-electromechanical System)射频微系统,采用冲击响应谱与瞬态动力学方法,研究板级与试验条件下的高冲击载荷响应。仿真结果表明,该射频微系统能够承受高冲击过载,仿真结果可提前预判结构失效点,提高产品抗冲击可靠性。
The high overload impact test is costly and time consuming,and the failure detection means are few,so it is difficult to locate the weak points of the structure.In this paper the impact response spectrum and transient dynamics method are used to study the impact load response of a RF microsystem based on bulk silicon micro-electromechanical system(MEMS)at plate level and under experimental conditions.The simulation results show that the RF microsystem can bear a high impact load,which can predict the structural failure point so as to improve the impact reliability of product.
作者
冯政森
王辂
曾燕萍
杨兵
祁冬
王志辉
张睿
Feng Zhengsen;Wang Lu;Zeng Yanping;Yang Bing;Qi Dong;Wang Zhihui;Zhang Rui(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035,China;The 10th Research Institute of China Electronics Technology Group Corporation,Chengdu 610036,China)
出处
《电子技术应用》
2024年第2期65-70,共6页
Application of Electronic Technique
基金
中国博士后科学基金面上项目(2022M722962)。
关键词
体硅MEMS
射频微系统
冲击
响应谱
瞬态动力学
可靠性
bulk silicon MEMS
RF microsystem
impact
response spectrum
transient dynamics
reliability
