氮化镓功率器件的发展与展望

Development and Prospects of Gallium Nitride Power Devices

阐述GaN基器件的两种发展路线,GaN基垂直导通结构和GaN基平面导通结构,探讨GaN基电子电力器件的类型,传统GIT结构与HD-GIT结构,分析动态高温工作寿命测试结果。

This paper describes two development paths of GaN based devices,GaN based vertical conduction structure and GaN based planar conduction structure.It explores the types of GaN based electronic power devices,traditional GIT structure and HD-GIT structure,and analyzes the results of dynamic high-temperature working life testing.