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Tuning the band gap of the CIGS solar buffer layer Cd_(1-x)Zn_(x)S(x=0—1) to achieve high efficiency

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摘要 To evaluate the impact of zinc sulfate(ZnSO_(4)) concentration on the structural properties of the films,Cd_(1-x)Zn_(x)S thin films were formed on glass substrates using chemical bath deposition(CBD) in this study.The effect of ZnSO_(4) precursor concentration on the surface morphology,optical properties,and morphological structure of the Cd_(1-x)Zn_(x)S films was investigated.To study the impact of zinc doping content on the performance metrics of Cu(In_(1-x)Ga_(x))Se_(2)(CIGS)cells in the experimental group and to improve the buffer layer thickness,simulations were run using one-dimensional solar cell capacitance simulator(SCAPS-1D) software.
出处 《Optoelectronics Letters》 EI 2024年第2期100-106,共7页 光电子快报(英文版)
基金 supported by the Science and Technology Innovation Development Program (No.70304901)。
关键词 CIGS (x) LAYER
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