800 V充电平台中SiC材料的应用及发展趋势

Application and Development Trend of SiC Materials on 800 V Charging Platform

SiC功率器件具有优异的性能,已经成为高端新能源汽车的核心部件,并随着应用成本的降低在逐步取代传统的Si基器件。然而,SiC单晶生长的参数可控性差、成本高、扩径难度大,它的市场渗透受到制约。当前对于SiC材料的投资非常火热,国内也有大量产业项目开展,但是实际投产却相对较少,半导体材料行业准入门槛较高,也需警惕重复建设的风险。山西烁科晶体有限公司实现了6英寸(1英寸=25.4 mm)SiC衬底产业化,并推出了8英寸产品,计划在十四五期间内将年产能扩充至150万片以满足市场巨大的需求,同时不断提升产品的良率及性能,助力第三代半导体行业的发展,在实现“碳达峰碳中和”的目标道路上贡献力量。

SiC power devices have excellent performance and have become the core components of high-end new energy vehicles,gradually replacing traditional Si based devices with the reduction of application costs.However,because of the poor controllability of SiC single crystal growth parameters,high cost,difficulty in diameter enlargement,its market penetration is restricted.The current investment in SiC materials is very hot,and there are also a large number of industrial projects carried out in China,but the actual production is relatively small.The entry threshold for the semiconductor material industry is high,and it is also necessary to be cautious of the risk of duplicate construction.Shanxi Semisic Crystal Co.,Ltd.has achieved the industrialization of 6-inch SiC substrates and launched 8-inch products,and plans to expand its annual production capacity to 1.5 million pieces during the next five year plan period to face saturated orders,while continuously improving product yield and performance,helping the development of the third-generation semiconductor industry and contributing to the goal of achieving carbon peak and carbon neutrality.