射频感性耦合等离子体的晶圆光刻胶扫胶技术

Photoresist Stripping with RF Inductively Coupled Plasma on Wafer Surface

基于电感耦合等离子体(ICP)放电原理,设计了一种射频感性耦合等离子体装置,讲解了构成该等离子体装置的各个系统功能,并以此装置为依托研究了晶圆表面光刻胶扫胶技术,分析时间、馈入功率、加热温度、工艺气体流量对AZ4620光刻胶扫胶工艺的影响。试验结果表明,增大馈入功率与加热温度均可不同程度的提高扫胶速率,过大的工艺气体供给量甚至会降低扫胶速率,时间的长短不会影响扫胶速率的快慢,与扫胶厚度基本呈线性关系。扫胶后的片内均匀性均在10%以内,满足半导体芯片制备的相关工艺要求,研究结果对半导体行业晶圆光刻胶的去除提供了相应的参考依据。

Based on the principle of inductively coupled plasma discharge,a radio-frequency inductively coupled plasma device is designed.The various system functions that make up the plasma device have been explained.Based on this device,the photoresist stripping on wafer surface is studied,and the effects of time,feedback power,heating temperature and process gas flow on AZ4620 photoresist stripping process are analyzed.The experimental results show that the increased feedback power and increased heating temperature can increase the stripping rate to varying degrees,excessive process gas supply can even reduce the rate of photoresist stripping,the length of time can not affect the speed of photoresist stripping,and it is basically a linear relationship with the thickness of the stripping photoresist.The uniformity of the wafer after the photoresist stripping is within 10%,which meets the requirements of the semiconductor chip production,the research results provide a corresponding reference basis for the photoresist stripping process in the semiconductor industry.