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基于3525驱动板的推挽式非隔离型变压器DC-DC升压设计

Design of Push-pull Non Isolation Transformer DC-DC Boosting Based on 3525 Driver Board
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摘要 设计了一种非隔离型推挽式变压器DC-DC升压方式,给出了推挽式升压主要电路模块参数的设计方法,其中包括尖峰吸收电路、MOS管外围电路、变压器以及整流桥。通过3525驱动板实现变压器输出电压非隔离反馈调节与MOS管驱动。通过设计发现在推挽式升压中:RC尖峰吸收电路,RC参数值与电路寄生电容电感、MOS管结电容以及电路整体谐振有关,并当电阻值固定时,电容越大尖峰吸收效果越好;MOS管需用NPN型,并考虑输入信号的阻抗平衡以及NMOS的安全与性能;变压器设计中需注意磁通不平衡和磁饱和引起的变压器短路,磁通不平衡可通过调节MOS管驱动信号使MOS管导通时间基本一致实现,磁饱和可通过对磁心开气隙使磁心磁饱和强度增加的方式进行调节;整流桥设计要点是考虑能量转化效率以及器件耐电压耐电流的值。通过3525驱动板的1、2以及9引脚和电阻电容实现非隔离电压采集,成本更低,并设计简单,稳定性强。 A non-isolated push-pull transformer DC-DC boosting method is designed,and the design method of the parameters of the main circuit module of the push-pull boosting is given,which includes the spike absorption circuit,the MOS tube peripheral circuit,the transformer and the rectifier bridge.Through the 3525 driver board to realize the transformer output voltage non-isolated feedback regulation and MOS tube drive.Through the design found in the push-pull boost:RC spike absorption circuit,RC parameter values and circuit parasitic capacitance inductance,MOS junction capacitance and circuit resonance,and when the resistance value is fixed,the larger the capacitance the better the spike absorption effect;MOS tubes need to be used in the NPN-type,and to consider the balance of the impedance of the input signal as well as the safety and performance of the NMOS;the transformer design needs to be aware of flux imbalance and magnetic saturation caused by transformer short-circuit.Transformer design should pay attention to the flux imbalance and magnetic saturation caused by the transformer short circuit,flux imbalance can be achieved by adjusting the MOS tube drive signal so that the MOS tube conduction time is basically the same,magnetic saturation can be adjusted through the core open air gap to increase the magnetic saturation intensity of the magnetic core;rectifier bridge design is to consider the energy conversion efficiency as well as the device resistance to the value of the voltage and current.Through the 3525 driver board 1,2 and 9 pins and resistor-capacitor non-isolated voltage acquisition,lower cost,and simple design,strong stability.
作者 嵇志腾 汪志成 罗雅孜 陈经纬 李云翔 李紫微 纪荣焕 Ji Zhiteng;Wang Zhicheng;Luo Yazi;Chen Jingwei;Li Yunxiang;Li Ziwei;Ji Ronghuan(East China University of Technology,Nanchang 330013,China;Quanzhou Weidun Electric Co.,Ltd.,Quanzhou,Fujian 362012,China)
出处 《机电工程技术》 2024年第3期248-252,305,共6页 Mechanical & Electrical Engineering Technology
基金 江西省技术创新引导类项目(科技合作专项)(20212BDH80008)。
关键词 推挽式 变压器 DC-DC 3525驱动板 非隔离型 push-pull transformer DC-DC 3525 driver board non-isolated
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  • 1王金丽,李金元,徐腊元.大功率电力电子开关用于配电变压器无弧有载调压方案[J].电力系统自动化,2006,30(15):97-102. 被引量:38
  • 2王丹,毛承雄,陆继明.自平衡电子电力变压器[J].中国电机工程学报,2007,27(6):77-83. 被引量:58
  • 3毛承雄,王丹,范澍,等.电力电子变压器[M].北京:中国电力出版社,2010:16-18.
  • 4成建鹏.高压变频器和电子电力变压器共模电压研究[D].武汉:华中科技大学,2006.
  • 5薛军霞.电子电力变压器低压级变流器并联均流研究[D].湖北省:华中科技大学,2012.
  • 6崔艳艳.基于电子电力变压器的配电网无功电压优化控制[D].湖北:华中科技大学,2006.
  • 7张晓东.电力电子变压器及其在电力系统中的应用[D].山东:山东大学’2012.
  • 8杨丽娇.三相固态变压器最优控制研究[D].湖南:长沙理工大学,2012.
  • 9刘文思.电力电子变压器建模方法及控制技术研究[D].山东:山东大学,2011.
  • 10DasM K, Capell C, Grider D E, et al. 10 kV, 120 A SiC half H-bridgepower MOSFET modules suitable for high frequency , medium voltageapplications[C]//Proceedings of 2011 IEEE Energy Conversion Congressand Exposition (ECCE). Arizona: ECCE, 2011: 2689-2692.

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