Ti/TiO_(2)/p-Si阻变存储器中非线性电阻转变机制的研究

Nonlinear Resistive Switching Mechanism in Ti/TiO_(2)/p-Si Resistive Switching Memory Devices

采用磁控溅射沉积技术在p型硅片(p-Si)上沉积TiO_(2)薄膜,然后使用掩模板沉积Ti顶电极,制备出具有Ti/TiO_(2)/p-Si结构的阻变存储器。该器件表现出了稳定的非线性电阻转变特性,该器件具有自整流效应,并且具有较大的开关比(高于10^(3))和非常稳定的循环特性。器件的电阻转变机制为空间电荷限制电流传导和肖特基发射机制。研究表明Ti/TiO_(2)/p-Si器件是一种非常有潜力的下一代非易失性存储器件。

TiO_(2) thin film was deposited on p-type silicon(p-Si)substrate by magnetron sputtering technology.Ti top electrode was deposited using hard mask.The resistive switching memory devices with Ti/TiO_(2)/p-Si structure were prepared.The device exhibits stable nonlinear resistance switching characteristics,and the device has a self-rectifying effect.Moreover,the device has a large on/off ratio(larger than 103)and very stable endurance characteristics.The resistive switching mechanisms of the device include space charge limited current conduction and Schottky emission.It is shown that Ti/TiO_(2)/p-Si device is a promising next generation non-volatile memory device.