SnO_(2)/MAPbI_(3)平面异质结光电探测器的制备及性能研究

Fabrication and Properties of SnO_(2)/MAPbI_(3) Planar Heterojunction Photodetectors

SnO_(2)由于其高导电性、对可见光的高透过率、较大的带隙和可溶液制备等优点一直被广泛研究和应用。但是,旋涂法制备的SnO_(2)薄膜的浸润性较差,严重影响钙钛矿光敏层的成膜质量。采用紫外臭氧(UVO)处理改善SnO_(2)薄膜的表面浸润性,同时可以显著减少其表面氧空位浓度、提高钙钛矿光敏层的成膜质量。构建的SnO_(2)/CH_(3)NH_(3)PbI_(3)平面异质结光电探测器,在0.8 V偏压和光强为1.7 mW·cm^(-2)的490 nm光照下,获得284 mA·W^(-1)的响应率以及3.5×10^(10) cm·Hz^(1/2)·W^(-1)的探测率。

SnO_(2) has been widely studied and applied because of its high conductivity,high transmittance to visible light,large band gap and solvable preparation.However,SnO_(2) films prepared by spin-coating method have poor wettability,which seriously affects the quality of perovskite photosensitive layer.Ultraviolet-ozone(UVO)treatment can improve the surface wettability of SnO_(2) thin films,decrease the oxygen vacancy concentration and improve the quality of perovskite photosensitive layer.The SnO_(2)/CH_(3)NH_(3)PbI_(3) planar heterojunction photodetector was constructed,and the responsivity of 284 mA·W^(-1) and detectivity of 3.5×10^(10) cm·Hz^(1/2)·W^(-1) were obtained under 0.8 V bias and 490 nm illumination with light intensity of 1.7 mW·cm^(-2).