不同介电层对Hf_(x)Zr_(1-x)O_(2)薄膜铁电性能影响的研究进展

R esearch Progress of the Influences of Different Dielectric Layers on Ferroelectric Properties of H_(x)Zr_(1-x)O_(2)Thin Films

近年来,铁电Hf_(x)Zr_(1-x)O_(2)(HZO)薄膜受到越来越多的关注,但是铁电层与电极材料层以及铁电层与半导体衬底层之间的界面问题并没有得到解决,阻碍了HZO薄膜的进一步应用。总结了通过引入不同介电层材料,如Al_(2)O_(3)、ZrO_(2)、HfO_(2)、Ta_(2)O_5等,调节HZO薄膜铁电性能的方法及其机理;详细介绍了各种介电层材料作为封盖层对HZO薄膜铁电性能的影响,如对HZO薄膜提供平面内应力、控制铁电层的晶粒尺寸及作为铁电层形核核心的作用;最后,总结并展望了利用介电层调控HZO薄膜铁电性能的一般规律,为后续相关研究的开展提供了指导。

In recent years,ferroelectric Hf_(x)Zr_(1-x)O_(2)(HZO)thin films have attracted more and more attention.However,the interface problems between the ferroelectric layer and the electrode material layer,as well as between the ferroelectric layer and the semiconductor substrate layer,have not been solved,which limits the further application of HZO thin films.The methods and mechanisms of adjusting the ferroelectric properties of HZO thin films by introducing different dielectric layer materials are summa-rized,such as Al_(2)O_(3),ZrO_(2),HfO_(2),Ta2O5,etc.The influences of various dielectric layer materials as capping layer on the ferroelectric properties of HZO thin films are introduced in detail,such as providing in-plane stress for HZO thin films,controlling the grain size of the ferroelectric layer and acting as the nucleation core of ferroelectric layer.Finally,the general law of using dielectric layer to regulate and control the ferroelectric properties of HZO thin films is summarized and prospected,which provides guidance for the development of related researches in the future.