一种V波段高效率5W GaN功率放大器MMIC

A V-Band High Efficiency 5 W GaN Power Amplifier MMIC

基于0.13μm SiC基GaN高电子迁移率晶体管(HEMT)工艺,设计了一款V波段GaN功率放大器单片微波集成电路(MMIC)。该功率放大器MMIC采用三级放大拓扑结构以满足增益需求;使用高低阻抗微带传输线进行阻抗匹配,通过威尔金森功分器/合成器完成功率放大器的末端功率合成;通过对晶体管宽长比的设计与多胞晶体管的合成,实现了功率放大器的高功率稳定工作和高效率输出。经过测试,在59~61 GHz频率范围内,在占空比为20%、脉宽为100μs时,该功率放大器MMIC的饱和输出功率达到37 dBm以上,功率附加效率(PAE)大于21.1%,功率增益大于17 dB;连续波测试条件下输出功率大于36.8 dBm, PAE大于21%。该设计在输出功率和PAE上具有一定的优势。

Based on 0.13μm GaN-on-SiC high electron mobility transistor(HEMT)process,a V-band GaN power amplifier monolithic microwave integrated circuit(MMIC)was designed.The power amplifier MMIC adopted a three-stage amplification topology to meet the gain requirements.High and low impedance microstrip transmission lines were used for impedance matching,and the power synthesis of the power amplifier at the end was completed through Wilkinson power divider/combiner.Through the design of width-length ratio of transistors and the synthesis of multi-cell transistors,the high-power stable operation and high-efficiency output of power amplifier were realized.After testing,in the frequency range of 59-61 GHz,when the duty cycle is 20%and the pulse width is 100μs,the saturated output power of the power amplifier MMIC reaches more than 37 dBm,the power added efficiency(PAE)is greater than 21.1%,and the power gain is greater than 17 dB.The output power is greater than 36.8 dBm under continuous wave test conditions,and the PAE is greater than 21%.This design has certain advantages in output power and PAE.