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X射线光电子能谱技术及其应用

X-ray photoelectron spectroscopy and its applications
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摘要 X射线光电子能谱法(XPS)是最重要且使用最广泛的表面分析技术。较为全面地介绍了X射线能谱法,内容涵盖原理、分析方法、应用及技术进展。原理介绍基于理工科大学本科层级的知识,阐述了XPS的科学原理以及仪器原理;分析方法部分概述了分析的关键步骤及要点;应用部分以热门研究的材料类型分类(催化剂、生物材料、碳材料、高分子材料等)进行介绍,介绍的同时兼顾介绍了X射线光电子能谱法的一些常用技术以及在各种材料中的应用特点。本文旨在帮助该领域的初学者,包括尚未完全熟悉该技术的研究人员、研究生和X射线光电子能谱从业人员,使他们能够全面了解X射线光电子能谱技术。 X-ray photoelectron spectroscopy is the most important and widely used surface analysis technique.This article provides a thorough overview of X-ray spectroscopy,covering its principles,analytical methods,applica-tions,and recent progress.The principle of the technique is explained based on undergraduate-level knowledge.The crucial steps and key aspects of the analysis process are then discussed.The application section illustrates the utilization of X-ray photoelectron spectroscopy for different material categories,along with an introduction of com-monly employed techniques and their application characteristics in these domains.This article is intended to be helpful for beginners in this field,including researchers,postgraduate students,and X-ray photoelectron spectros-copy practitioners who still need to become fully acquainted with the technique,enabling them to develop a compre-hensive understanding of X-ray photoelectron spectroscopy.
作者 程斌 CHENG Bin(School of Material Science and Engineering,Beijing University of Chemical Technology,Beijing 100029,China)
出处 《北京化工大学学报(自然科学版)》 CAS CSCD 北大核心 2024年第2期1-18,共18页 Journal of Beijing University of Chemical Technology(Natural Science Edition)
关键词 X射线光电子能谱法(XPS) X射线光电子能谱仪 X-ray photoelectron spectroscopy(XPS) X-ray photoelectron spectrometer
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  • 1刘芬,邱丽美,赵良仲,王海,阚莹,宋小平.用XPS法精确测量硅片上超薄氧化硅的厚度[J].化学通报,2006,69(5):393-398. 被引量:4
  • 2Wagner C D,Riggs W M,Davis L E,et al.Handbook of X-Ray photoelectron spectroscopy,PerKin-Elmer Corporation,Minnesota,USA,1979,7.
  • 3Grant J T,Williams P,Fine J,Powell C J.The status of refer-ence data,reference materials and reference procedures in surfaceanalysis. Surface and Interface Analysis . 1988
  • 4Tanuma S,Powell C J,Penn D R.Calculations of electron ine-lastic mean free paths V:data for 14 organic compounds over the50~2000 eV range. Surface and Interface Analysis . 1994
  • 5Seah MP,Gilmore I S.Simplified equations for correction pa-rameters for elastic scattering effects in AES and XPS for Q,βand attenuation lengths. Surface and Interface Analysis . 2001
  • 6Seah MP,Spencer S J,Bensebaa F,Vickridge I,Danzebrink H,Krumrey M,Gross T,Oesterle W,Wendler E,Rheinlander B,Azuma Y,Kojima I,Suzuki N,Suzuki M,Tanuma S,Moon DW,Lee HJ,Cho H M,Chen H Y,Wee A T S,Osipowicz T,Pan J S,Jordaan WA,Hauert R,Klotz U,van der Mare.Critical reviewof the current status of thickness meas-urements for ultrathin SiO2on Si Part V:Results of a CCQMpilotstudy. Surface and Interface Analysis . 2004
  • 7Seah MP.Intercomparison of silicon dioxide thickness measure-ments made by multiple techniques:the route to accuracy. Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and Films . 2004
  • 8Seah M P.CCQM-K32 key comparison and P84 pilot study:amount of silicon oxide as a thickness of SiO2on Si. Metrolo-gia . 2008
  • 9Seah MP,Unger W E S,Wang H,Jordaan W,Gross Th,DuraJ A,Moon D W,Totarang P,Krumrey M,Hauert R,Mo Z Q.Ultra-thin SiO2on Si IX:absolute measurements of the amount ofsilicon oxide as a thickness of SiO2on Si. Surface and Inter-face Analysis . 2009
  • 10Kim K J,Moon D W,Park C J,Simons D,Gillen G,Jin H,Kang HJ.Quantitative surface analysis of Fe-Ni alloy films byXPS,AES and SIMS. Surface and Interface Analysis . 2007

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