摘要
基于GaN太赫兹二极管芯片,采用非平衡式电路结构,设计了一款260 GHz三倍频器。采用GaN肖特基二极管芯片提高电路的耐受功率和输出功率;采用“减高+减宽”的输出波导结构抑制二次谐波;采用高低阻抗带线结构设计了倍频器的输入滤波器和输出滤波器。测试结果显示,该三倍频器在261 GHz峰值频率下,实现最大输出功率为69.1 mW,转换效率为3.3%,同时具有较好的谐波抑制特性。
A 260 GHz frequency tripler based on GaN Schottky barrier diode is proposed.Unbalanced structure is adopted with GaN SBD chip to improve the tolerable power and output power of the circuit.The height-reduced and width-reduced output waveguide structure is employed to suppress the second harmonic.The input and output filter of the frequency multiplier is designed with high and low impedance strip line structure.The test results show that the frequency multiplier achieves a maximum output power of 69.1 mW and conversion efficiency of 3.3%at 261 GHz with good harmonic suppression characteristics.
作者
盛百城
宋旭波
顾国栋
张立森
刘帅
万悦
魏碧华
李鹏雨
郝晓林
梁士雄
冯志红
SHENG Baicheng;SONG Xubo;GU Guodong;ZHANG Lisen;LIU Shuai;WAN Yue;WEI Bihua;LI Pengyu;HAO Xiaolin;LIANG Shixiong;FENG Zhihong(The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang Hebei 050051,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang Hebei 050051,China)
出处
《太赫兹科学与电子信息学报》
2024年第3期290-295,共6页
Journal of Terahertz Science and Electronic Information Technology
基金
国家自然科学基金资助项目(62201532)。
关键词
三倍频器
太赫兹
肖特基二极管
非平衡式
倒装
frequency triplier
terahertz
Schottky barrier diode
unbanlanced structure
flip-chip
