基于宽禁带半导体材料氮化镓的原子力显微镜分析

Atomic force microscopy analysis of gallium nitride based onwide-band gap semiconductor material

微波功率器件在无线通信技术领域扮演着重要角色,而宽禁带半导体材料对微波功率器件的研究起着关键作用。氮化镓作为宽禁带半导体的代表,具有介电常数小、载流子饱和速率高、热导率高等优良特性。文章通过对氮化镓外延材料进行深入的原子力显微镜(Atomic Force Microscope,AFM)分析,能够更精准地表征氮化镓外延材料,从而助力微波功率器件的发展。

Microwave power devices play an important role in the field of wireless communication technology,and wide band gap semiconductor materials play a key role in the research of microwave power devices.As a representative of wide band-gap semiconductors,gallium nitride has the advantages of low dielectric constant,high carrier saturation rate and high thermal conductivity.In this paper,through in-depth atomic force microscope(AFM)analysis of gallium nitride epitaxial materials,gallium nitride epitaxial materials can be characterized more accurately,so as to promote the development of microwave power devices.