国内外电子级多晶硅技术发展现状及未来展望

The developing status and future prospect of electronic-grade polysilicon technology in the whole world

本文主要分析阐述了多晶硅的不同生产工艺及其优缺点。目前生产电子级多晶硅的主要方法是改良西门子法,该方法在生产过程中能耗较大,污染多,大规模量产比较困难;另外,其它两种工艺是硅烷法和氯硅烷还原法,目前仅适用于太阳能级多晶硅制备,未来是否可以满足电子级多晶硅制备要求有待研究;应该看到,分析表明:若氯硅烷还原法可以制备出电子级多晶硅,那么氯硅烷还原法与改良西门子法相结合后的工艺不失为新一代生产电子级多晶硅的好方法。

The different production processes of polycrystalline silicon and their advantages and disadvantages are described.At present,the main method of producing electronic-grade polysilicon is the modified Siemens method.The modified Siemens method consumes a lot of energy and polluted environments in the produced process,it is difficult to mass-produce.The other two methods are silane method and chlorosilane reduction method,which are currently only suitable for the preparation of solar grade polysilicon,whether can be employed to produce the polysilicon of electronic grade needs to be studied in the future.In addition,the analysis shows that:if the chlorosilane reduction method can produce electronic-grade polysilicon,then the combination of chlorosilane reduction method and modified Siemens method can become a new generation of electronic-grade polysilicon production method.