摘要
Two-dimensional(2D)layered materials have many potential applications in memristors owing to their unique atomic structures and electronic properties.Memristors can overcome the in-memory bottleneck for use in brain-like neuromorphic computing.However,exploiting additional lateral memtransistors based on 2D layered materials remains challenging.There are few studies on p-type semiconductors that have not been theoretically analyzed.In this study,a lateral memtransistor based on p-type GeSe nanosheets is investigated.A threeterminal GeSe memtransistor that modulated the interfacial barrier height was fabricated using low-energy ion irradiation;the memtransistor exhibited a low operating voltage.The memtransistor successfully mimics biological synapse,including neuroplasticity functions,such as short-term plasticity,long-term plasticity,paired-pulse facilitation,and spike-timing-dependent plasticity.The mechanism of interfacial modulation was verified by experimental results and theoretical calculations.The results show that it is feasible to modulate the interface of 2D GeSe nanosheets using low-energy ion irradiation to realize a lateral memtransistor.This may provide promising opportunities for artificial neuromorphic system applications based on 2D layered materials.
出处
《InfoMat》
SCIE
CSCD
2023年第12期54-64,共11页
信息材料(英文)
基金
National Natural Science Foundation of China,Grant/Award Numbers:12275198,12074293,12025503
Fundamental Research Funds for the Center Universities,Grant/Award Numbers:2042023kf0196,2042022kf1181。