摘要
阐述发现batch implant机台所作业的wafer状况,在wafer面内存在规律性梯度差异的dose分布。基于wafer processing过程中的形变现象,通过fine tune beam line及优化diskangle条件,可以定量设计dose梯度分布情况。通过优化离子注入在wafer面内分布的dose对称性,可以有效改善离子注入均匀性。
This paper describes regular dose gradient distribution in plane of a wafer which was processed by batch implant tool.Base on the shape change in a processing wafer,if fine tune beam line and optimize the disk angle condition,will quantitative design the dose gradient distribution.What’s better,the implant uniformity may be enhanced with an appropriate dose symmetry.
作者
庞宏庄
国子明
PANG Hongzhuang;GUO Ziming(Shanghai Huahong Grace Semiconductor Manufacturing Co.,Ltd.,Shanghai 201203,China.)
出处
《集成电路应用》
2024年第2期44-47,共4页
Application of IC