FD-SOI器件中PMOS源漏区外延层形貌改善研究

Study on Improving Morphology of Epitaxial Layer in Source Drain Region of PMOS in FD-SOI Devices

阐述FD-SOI器件中SiGe-RSD形貌不规则是导致Si Cap层被金属扎穿的原因。针对这一问题,对SiGe-RSD的制备工艺进行逐层(L1/L2/L3)优化,最终制备出形貌规则、表面平整的样品。随后的接触通孔工艺环节Si Cap层未被扎穿,形成良好的合金,器件PMOSFET的性能也得到明显提升。

This paper expounds that the irregular morphology of SiGe RSD in FD-SOI devices is the reason for the metal piercing of the Si Cap layer.To address this issue,the preparation process of SiGe RSD was optimized layer by layer(L1/L2/L3),resulting in the preparation of samples with regular morphology and smooth surface.The subsequent contact through-hole process did not puncture the Si Cap layer,forming a good alloy,and the performance of the device PMOSFET was significantly improved.