碳化硅衬底磨抛加工技术的研究进展与发展趋势

Grinding and Polishing Technology for Silicon Carbide Substrate:State-of-the-art and Prospective

碳化硅衬底难加工的材料特性叠加其大尺寸化、超薄化的放大效应,给现有的加工技术带来了巨大的挑战,高效率、高质量的碳化硅衬底加工技术成了当下的研究热点.本文综述了碳化硅衬底机械磨抛加工技术和化学反应磨抛加工技术的研究进展,对比各类磨抛技术的特点,指出碳化硅衬底磨抛加工技术面临的挑战和发展趋势,以期为大尺寸碳化硅衬底的高质量、高效率、低成本加工提供新的思路和方法.

The material characteristics of silicon carbide substrate,which are difficult to machine,coupled with its amplification effect of large-sized and ultra-thinned,pose a huge challenge to existing processing technologies.Consequently,the processing technology of high efficiency and high quality for silicon carbide substrate has become a current research focus.In this paper,the research progress of mechanical and chemical grinding and polishing technology for silicon carbide substrates is reviewed.The characteristics of various grinding and polishing technologies are compared.The challenge and development trend of grinding and polishing technologies of silicon carbide substrate is pointed out to provide new ideas and methods for high quality,high efficiency,and low-cost processing of large-size silicon carbide substrate.