GaN基高电子迁移率晶体管器件的可靠性及退化机制研究进展

Research progress on reliability and degradation mechanisms of GaN-based high electron mobility transistor devices

GaN基高电子迁移率晶体管(high electron mobility transistor,HEMT)器件在航天、通讯、雷达、电动汽车等领域具有广泛的应用,近年来成为电力电子器件的研究热点。在实际应用中,GaN基HEMT器件随着使用时间的延长会发生退化甚至失效的情况,器件的可靠性问题仍是进一步提高HEMT器件应用的绊脚石。因此,研究器件的可靠性及退化机制对于进一步优化器件性能具有极其重要的意义。将从影响器件可靠性的几个关键因素如高电场应力、高温存储、高温电场和重离子辐照等进行阐述,主要对近几年文献里报道的几种失效机制及相应的失效现象进行了综述和总结,最后讨论了进一步优化器件可靠性的措施,对进一步提高HEMT器件的应用起促进作用。

GaN-based high electron mobility transistor(HEMT)devices have been widely used in aerospace,communications,radar,electric vehicles and other fields,and have become a research hotspot in power electronic devices in recent years.In practical applications,GaN-based HEMT devices may suffer from degradations or even failures,and the reliability is still a stumbling block for further development.Therefore,it is critical to study the reliability and degradation mechanisms of the devices for further optimizing their performances.In this paper,several key factors which affect reliability of the devices,such as high field stress,high temperature storage,high temperature and high field,and heavy ion irradiation are described,and several failure mechanisms and corresponding failure phenomena are summarized.Finally,measures to further optimize the reliability of the devices are discussed,which can promote the applications of HEMT devices.