Ambient-condition strategy for rapid mass production of crystalline gallium oxide nanoarchitectures toward device application

Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bottlenecks,we demonstrate an ambient-condition strategy for rapid mass production of fourthgeneration semiconductor Ga_(2)O_(3)nanoarchitectures assembled by single-crystalline nanosheets in a controlled manner based on sonochemistry.Their growth is fundamentally determined by the introduced ethanediamine in rationally designed source materials,which could not only protect the metal Ga against reacting with H_(2)O into GaOOH,but facilitate the reaction of Ga with OH·radicals for target crystalline Ga_(2)O_(3)nanostructures.As a proof of concept for applications,the as-fabricated Ga_(2)O_(3)nanoarchitectures exhibit superb performances for electromagnetic wave absorption with a reflection loss value of 52.2 dB at 8.1 GHz,and ammonia sensing with high sensitivity and selectivity at room temperature,representing their bright future to be commercially applied in modern devices.