半导体异质结的界面热阻模型研究

On the Modelling of Thermal Boundary Resistance in Semiconductor Heterostructures

本研究提出了一种考虑声子界面透射与散射、过渡层内部声子散射,以及过渡层残余应力耦合作用的异质结等效界面热阻模型。基于该模型计算了两种典型GaN/AlN/Si半导体异质结样品的等效界面热阻,在所研究的温度下模型预测值与实验结果符合良好。根据模型预测结果,分析了不同过渡层厚度与温度下,主导等效界面热阻的声子散射机制。结果表明,过渡层内部的声子–晶界散射起主导作用,同时过渡层内的残余应力也会对等效界面热阻产生显著影响。

An effective thermal boundary resistance model of heterostructures is proposed in this study,which considers the coupling effect of phonon interface transmission and scattering,phonon scattering inside the transition layer,and residual stress in the transition layer.Based on the model,the effective thermal boundary resistance of two typical GaN/AlN/Si semiconductor heterostructures is calculated,and predictions of the model are in good agreement with the experimental results.According to the model predictions,the phonon scattering mechanism that dominates the effective thermal boundary resistance under different transition layer thicknesses and temperatures is analyzed.The results show that the phonon-grain boundary scattering inside the transition layer plays a dominant role,and the residual stress in the transition layer also has a significant effect on the thermal boundary resistance of heterostructures.