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Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

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摘要 Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.
作者 荀涛 牛昕玥 王朗宁 张斌 姚金妹 易木俣 杨汉武 侯静 刘金亮 张建徳 Tao Xun;Xinyue Niu;Langning Wang;Bin Zhang;Jinmei Yao;Yimu Yu;Hanwu Yang;Jing Hou;Jinliang Liu;Jiande Zhang(College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China;Nanhu Laser Laboratory,National University of Defense Technology,Changsha 410073,China)
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2024年第1期113-122,共10页 中国光学快报(英文版)
基金 supported in part by the National Natural Science Foundation of China(Nos.62071477 and 62101577) the Natural Science Foundation of Hunan Province(No.2021JJ40660)。
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