BaZnOS:Bi^(3+)荧光粉的制备及光学性能研究

Preparation and optical properties of BaZnOS:Bi^(3+)phosphor

以碳酸钡、硫化锌和氧化铋为原料,采用高温固相法合成了一系列铋(Bi)掺杂BaZnOS的蓝绿色荧光粉。研究了BaZnOS中Bi的位点占据、晶胞变化及其发光特性之间的相关性。在BaZnOS中,根据离子配位相同及半径相似原理,Ba位点是Bi最适合和稳定占据的位点。由于Bi^(3+)的半径略小于Ba^(2+)的半径,导致掺杂过后的晶胞参数有所缩小。在波长为372 nm的紫外光激发下,BaZnOS和BaZnOS:Bi^(3+)在400~600 nm处都显示出非常宽的发射带。其中未掺杂的BaZnOS发光归因于合成过程中的氧空位缺陷,掺杂Bi^(3+)后,Bi^(3+)结合到BaZnOS的晶格中,由于Bi^(3+)的^(3)P_(1,0)→^(1)S_(0)跃迁,最终使位于400~600 nm处的光致发光进一步增强2~3倍。通过色坐标计算,所制备的BaZnOS:Bi^(3+)荧光粉色坐标均位于蓝绿色区域,可作为与红光协调发射白光的潜力荧光粉,用于白光发光二极管领域。

A series of blue-green BaZnOS phosphors doped with bismuth(Bi)was synthesized by a high temperature solid-state method using barium carbonate,zinc sulfide and bismuth oxide as raw materials.The correlation between site occupation,unit cell change and luminescence properties of Bi in BaZnOS was studied.In BaZnOS,according to the principle of the same ion coordination and similar radius,Ba is the most suitable and stable site for Bi to occupy.Because the radius of Bi^(3+)is slightly smaller than that of Ba^(2+),the unit cell parameters after doping are reduced.Under the ultraviolet light excitation of 372 nm,both BaZnOS and BaZnOS:Bi^(3+)phosphors showed very wide emission bands at 400-600 nm.The luminescence of undoped BaZnOS is attributed to the oxygen vacancy defects in the synthesis process,and after doping with Bi^(3+),Bi^(3+)can be combined into the lattice of BaZnOS.Due to the^(3)P_(1,0)→^(1)S_(0)transition of Bi^(3+),the photoluminescence is further enhanced by about 2-3 times at 400-600 nm.Calculation of chromaticity coordinates showed that the chromaticity coordinates of prepared BaZnOS:Bi^(3+)phosphors are all located in the blue-green region,and the BaZnOS:Bi^(3+)phosphors can be used as potential phosphors to emit white light in coordination with red light,and they can be used in the field of white light-emitting diodes.