金属氧化物异质结光电探测器研究进展

Research Progress in the Metal Oxide Heterojunction Photodetectors

金属氧化物(metal oxide,MO)因其具有易于制备、高稳定性、对载流子的选择性传输等优点,被广泛应用于光电探测领域。MO材料具有较强的光吸收,但表面效应和缺陷态等问题导致了MO光电探测器响应速度低和暗电流较大的问题。异质结中的内建电场可以有效促进光生电子-空穴对的分离,从而提升器件响应速度和降低器件暗电流。因此,构建金属氧化物异质结光电探测器(heterojunction photodetectors,HPDs),对于MO在光电子领域的进一步应用具有重要的意义。本文先介绍了MO的界面性质,然后围绕PN、PIN和同型异质结3种结构,对金属氧化物HPDs的工作机制进行了阐述。接着对响应波段在紫外-可见-近红外光区的、具有不同结构的MO/MO和MO/Si HPDs的性能参数进行了分析和比较,并讨论了金属氧化物HPDs的性能优化方法,最后对金属氧化物HPDs的发展进行了展望。

Metal oxides(MOs)have been widely used in photodetection because of advantages such as easy preparation,high stability,and selective transport of carriers.The MO materials exhibit strong light absorption properties.However,there are issues with MO photodetectors such as their low response speed and large dark current owing to the surface effects and defect states.The built-in electric field in the heterojunction can effectively promote the separation of photogenerated electron-hole pairs,thus improving the device response speed and reducing the dark current.Thus,the construction of metal oxide heterojunction photodetectors(HPDs)is of great significance for the further application of MO in the field of optoelectronics.This paper introduces the interface properties of MO and elaborates on the working mechanism of metal oxide HPDs around the PN,PIN,and isotype heterojunctions.Next,the performance parameters of MO/MO and MO/Si HPDs with different structure and response in UV-Vis-NIR band are analyzed and compared.Subsequently,improved methods of the metal oxide HPDs performances are discussed.Finally,the development of metal oxide HPDs is discussed.