高品质磷化铟多晶的HGF法合成研究

Synthesis of High-quality Indium Phosphide Polycrystal using Horizontal Gradient-freeze Method

用高压水平温度梯度定向结晶技术合成了磷化铟(InP)多晶。分析了不同温度梯度对多晶配比度的影响,结果表明当温度梯度低于4℃/cm时,多晶呈明显富铟状态,配比度在97%以下;当温度梯度在5℃/cm以上时多晶致密、无铟夹杂,达到近化学配比状态,配比度达到99%以上。对多晶样品进行了霍尔测试和辉光放电质谱(GDMS)测试,合成的高配比度磷化铟多晶载流子浓度在8×10^(15)cm^(-3)以下,迁移率在3900 cm~2·V^(-1)·s^(-1)以上,纯度达到99.99999%以上。多晶中的杂质主要有Si,S,Fe,Cu,Zn,As等,分析了杂质的来源及其对材料性能的影响。

Indium phosphide(InP) polycrystals were synthesized using the horizontal gradient-freeze method.The influence of different temperature gradients on the ratio of polycrystals was analyzed,The results show that the crystals are indium-rich with a ratio of less than 97% when the temperature gradient is lower than 4 ℃/cm,and the crystals are stoichiometric with a ratio of more than 99% when the temperature gradient is above 5 ℃/cm.The impurities and electrical properties of the polycrystalline samples were analyzed using glow discharge mass spectrometry(GDMS) and Hall tests.The purity of stoichiometric InP polycrystals was greater than 99.999 99%;the carrier concentration was less than 8×10~(15) cm~(-3);the mobility was greater than 3 900 cm~2·V~(-1)·s~(-1).The impurities in the polycrystals primarily included Si,S,Fe,Cu,Zn,and As.The sources of the impurities and their effects on the properties of the materials were analyzed.