一种基于关断电压的IGBT模块结温监测方法

A method for monitoring junction temperature of IGBT module based on turn-off voltage

实现准确的结温监测对增强绝缘栅双极晶体管(IGBT)模块的可靠性、延长器件寿命至关重要。文章提出了一种基于关断电压的IGBT模块结温监测方法,具有不受负载电流干扰的特性。该方法首先验证了关断电压作为温敏电参数的合理性;其次,采用深度神经网络(DNN),排除关断电压对负载电流的依赖,达到不同工况下保持准确结温预测的目的;最后,通过单相脉宽调制(PWM)进行试验验证。结果显示,该结温监测方法误差在±5℃的范围内,这表明利用DNN优化结温监测是可行的。

The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor(IGBT)modules and extending the lifespan of devices.This paper introduces a method for monitoring junction temperature of IGBT modules based on turn-off voltages(TOV),which highlights resistance to load currents.The study initially verified the rationality of using TOVs as a temperature-sensitive electrical parameter.The deep neural network(DNN)technology was subsequently employed to eradicate the dependence of TOVs on load currents,facilitating accurate junction temperature prediction under varying operational conditions.The proposed method was validated through a single-phase pulse width modulation(PWM)experiment.The findings reveal an error range of±5℃for this method,demonstrating the feasibility of optimizing junction temperature monitoring through DNN utilization.