一种IGBT简化结温曲线计算方法

A simplified junction temperature curve calculation method for IGBT

文章基于离散积分原理实现对基波周期内的结温量化表达,开发了一种简化结温曲线方法,将包含详细结温信息的结温波动曲线转换为仅含关键结温信息的简化结温波动曲线,计算精度高,同时能够快速确定最大/最小结温及其出现时刻,极大地降低了计算负担。通过不同基波频率的结温仿真分析,文章所提方法能很好反映结温波动变化,计算精度高。相较于其他结温计算方法,文章所提方法的计算速度优势明显,适应于长时间尺度计算。最后,通过功率考核试验实测结温波动,验证了该方法的准确性。

This paper introduces a simplified junction temperature curve method for insulated gate bipolar transistors(IGBTs),through the utilization of the discrete integral principle.By quantifying junction temperatures within the fundamental wave period,this approach enables the conversion of junction temperature fluctuation curves containing detailed junction temperature information into simplified representations containing only key junction temperature information.The proposed method exhibited high calculation accuracy,as well as the capacity to rapidly determine maximum and minimum junction temperatures and their corresponding occurrence times,thus greatly reducing the calculation burden.A simulation analysis of junction temperature fluctuations at different fundamental wave frequencies proved the effectiveness in reflecting junction temperature fluctuations and high calculation accuracy of the proposed method.Furthermore,a comparison with other junction temperature calculation methods highlighted the obvious advantages of the proposed method in terms of calculation speed,and its particular suitability for calculations on long time scales.Finally,the accuracy of the proposed method was verified by measuring junction temperature fluctuations in a power assessment test.