富汞开管热处理对碲镉汞性能影响的研究

Study of the effect of heat treatment of mercury rich open tubes on the properties of MCT

本文采用富汞开管热处理设备对中波MCT材料进行N型退火,研究并解决了如何控制汞蒸气回流的问题。在相同的退火温度和退火时间,使用开管退火工艺和闭管退火工艺进行了对比实验,研究发现随退火时间的增加,两种工艺处理的芯片霍尔浓度呈下降趋势,载流子迁移率呈上升趋势。当退火温度和退火时间相同时,开管退火工艺的载流子迁移率更高。对开管退火工艺的芯片进行I V测试和器件组件最终测试,其性能较好。

In this paper,the N type annealing of medium wave MCT materials is implemented by using mercury rich open tube heat treatment equipment,and the problem of how to control the mercury vapor reflux is studied and solved.Comparative experiments are carried out at the same annealing temperature and annealing time using the open tube annealing process and the closed tube annealing process,and it is found that with the increase of the annealing time,the Hall concentration of the chips treated by the two processes show a decreasing trend and the carrier mobility show an increasing trend.When the annealing temperature and annealing time are the same,the carrier mobility of the open tube annealing process is higher.The I V test and the final test of the device assembly of the chip with open tube annealing process show better performance.