富集硼11三氟化硼制备工艺的研究进展

Research Progress of Preparation Technology of Enriched B11-Boron Trifluoride

富集硼11三氟化硼是半导体离子注入的重要掺杂源,与天然丰度三氟化硼相比,可显著提高芯片的稳定性和抗辐射干扰,被广泛应用于通信、国防、航空航天等领域中,随着国产替代化的进程,其制备工艺和生产路线呈现出相应的优缺点,在实际生产中,企业可根据自身情况选择合理的生产路线,得到富集硼11三氟化硼产品。文章主要对富集硼11三氟化硼制备工艺的研究进展加以论述,以供参考。

Enriched B11 boron trifluoride is an important doping source for semiconductor ion implantation.Compared with natural abundance boron trifluoride,it can significantly improve the stability and radiation interference of chips,and is widely used in fields such as communication,national defense,aerospace,etc.With the process of domestic substitution,its preparation process and production route show corresponding advantages and disadvantages.In actual production,enterprises can choose reasonable production routes based on their own situation to obtain enriched B11 boron trifluoride products.This paper mainly discusses the research progress of preparation technology of enriched B11 boron trifluoride,for reference.