射频磁控溅射工艺参数对掺钨氧化铟锡透明导电薄膜性能的影响

Effects of Process Parameters on the Properties of W-doped ITO Transparent Conductive Thin Films Prepared by RF Magnetron Sputtering

ITO薄膜是目前应用最为广泛的透明导电薄膜,通过在ITO中掺杂其他金属可以进一步改善ITO薄膜的光学和电学性能。本文采用射频(RF)磁控溅射法制备了掺钨氧化铟锡(ITO∶W)透明导电薄膜,研究了薄膜厚度、表面形貌、晶体结构以及光学和电学性能与各溅射参数之间的关系。当溅射功率大于40 W时,制备的ITO∶W薄膜为方铁锰矿结构的多晶薄膜,此时薄膜表面光滑平整而且具有良好的结晶性。在基板温度320℃、溅射功率80 W、溅射时间15 min、工作气压0.6 Pa条件下得到了光学和电学性能优良的ITO∶W薄膜,其方块电阻为10.5Ω/、电阻率为4.41×10^(-4)Ω·cm,对应的载流子浓度为2.23×10^(20)cm^(-3)、迁移率为27.3 cm^(2)·V^(-1)·s^(-1)、可见光(400~700 nm)范围内平均透射率为90.97%。此外,本研究还发现通过调节基板温度影响氧元素的状态可以改变ITO∶W薄膜的电学性能。

Indium-tin oxide(ITO)thin film is the most widely used transparent conductive oxide thin film by now,optical and electrical properties of ITO thin film is usually improved by doping other metal elements into it.In this study,a transparent conductive film of indium tin oxide doped with tungsten(ITO∶W)is prepared by radio frequency(RF)magnetron sputtering.The relationship between the crystal structure,surface morphology,film thickness,optical and electrical properties of ITO∶W thin films and each sputtering parameter is studied.When the sputtering power is greater than 40 W,the prepared ITO∶W thin films are polycrystalline films with cubic bixbyite structure,they have good crystallinity with a smooth and flat surface.Under the parameters of substrate temperature of 320℃,sputtering power of 80 W,sputtering time of 15 min,and working pressure of 0.6 Pa,the ITO∶W thin film with optimized electrical and optical performance is obtained,and its sheet resistance is 10.5Ω/□,resistivity is 4.41×10^(-4)Ω·cm,corresponding to carrier concentration of 2.23×10^(20)cm^(-3),mobility of 27.3 cm^(2)·V^(-1)·s^(-1),and average transmittance of 90.97%in the visible light range(400700 nm).Besides,electrical property of ITO∶W thin films can be affected by adjusting the substrate temperature to affect the state of oxygen.