真空慢退火工艺对4H-SiC核辐射探测器性能的影响

Effect of the vacuum slow annealing process on the performance of 4H-SiC nuclear radiation detectors

制备了一种肖特基二极管结构的4H-SiC辐射探测器.在真空环境下,用不同的温度对欧姆电极进行慢退火处理,达到良好的欧姆接触.对其反向I-V特性和能量分辨率进行测试对比,欧姆电极在800℃条件下性能最好,在全耗尽状态下能量分辨率为1.36%,耐压测试运行稳定, 200 V偏压下漏电流仅有463 pA.与其他退火温度相比,该工艺下的4H-SiC探测器运行稳定,具有漏电流低、能量分辨率高的优势.

A batch of 4H-SiC detectors with the Schottky diode structure was fabricated,and the Ohmic electrodes were slow-annealed at various temperatures to achieve good Ohmic contact in a vacuum environment.The reverse I-V characteristics and energy resolution were compared and analysed.The Ohmic electrode performed best at 800°C,with an energy resolution of 1.36%at full depletion.The 4H-SiC detector was stable at 200 V bias,with a low leakage current and high energy resolution compared to other annealing temperatures.