摘要
Transistors have been reshaping our lives since their initial appearance in the 1940s.As the central element of logic gates and integrated circuits(chips),they undoubtedly play an incomparable role in promoting the development of computers,smartphones,flat panel displays,Internet of Things,and even all electronic or electrical systems.The past decades have witnessed dominant transistors usually made from inorganic semiconductors such as silicon materials and metal oxides,which are advantageous to achieve high mobility,fast switching speed,and excellent stability.Thus,silicon transistors and metal oxide semiconductor field-effect transistors have been broadly used for electronic applications.However,these transistors are rigid and nearly approaching the fundamental limits on speed and power consumption,despite being manufactured at a much smaller scale to meet the projection of Moore’s law.As future transistors with mechanical flexibility/robustness and low-power consumption are demanded,innovation in functional materials,device configurations,and integrated processing techniques to facilitate the evolution from rigid devices to soft,durable,and biocompatible devices is imperative.
基金
National Natural Science Foundation of China(52173241)
Youth Top-notch Talents Program of Chongqing(CQYC20220511198 and cstc2024ycjh-bgzxm0132)
Fundamental Research Funds for the Central Universities(2023CDJXY-029)
Z.Yin also appreciates the support from the Hongshen Young Scholars Program of Chongqing University.