高压双脉冲位移电路源漏电阻计算方法分析

Analysis of Calculation Method for Source Leakage Resistance of High Voltage Dual Pulse Displacement Circuit

阐述在高压智能功率模块中,耐高压器件LDMOS是产生功耗的主要原因,高压双脉冲位移电路中源漏电阻的选取特别重要。分析高压窄脉冲移位电路的源极和漏极的电阻计算方法和选取理论。

This paper describes that in high-voltage intelligent power modules,the high-voltage resistant device LDMOS is the main cause of power consumption,and the selection of source drain resistance is particularly important in high-voltage dual pulse displacement circuits.It analyzes the calculation method and selection theory of the resistance of the source and drain electrodes in highvoltage narrow pulse shifting circuits.