砷化镓一维光子晶体加速度计理论性能研究

Theoretical Performance Study of GaAs 1D Photonic Crystal Accelerometer

该系统与以往的光学传感器不同,系统中将一种新的材料—砷化镓—应用于光学微机电系统(MEMS)传感器。基于GaAs的特性和波长调制分析的特点,设计了一个适用于高频率领域的光学MEMS传感器。此外,还使用了ANSYS的有限元分析(FEA)方法和严谨的耦合波分析(RCWA)方法。与其他高频传感器的比较表明,所提出的传感器在测量范围广、灵敏度高、交轴轴灵敏度几乎为零等特性方面显示出优势。所提出的光学传感器的光学灵敏度为2.99276,机械灵敏度为0.54nm/g。第一共振频率为23658.6Hz,线性测量范围为±135g,传感系统的灵敏度为161.61nm/g,工作带宽为0~23.6kHz。

The system differs from previous optical sensors in that a new material,gallium arsenide,is applied to an optical micro-electromechanical system(MEMS)sensor in the system.Based on the characteristics of GaAs and wavelength modulation analysis,an optical MEMS sensor suitable for high frequency fields is designed.In addition,the finite element analysis(FEA)method of ANSYS and the rigorous coupled wave analysis(RCWA)method are used.Compared with other high-frequency sensors,it shows that the proposed sensor has advantages in terms of characteristics such as wide measurement range,high sensitivity,and almost zero cross-axis axis sensitivity.The optical sensitivity of the proposed optical sensor is 2.99276 and the mechanical sensitivi⁃ty is 0.54nm/g.The first resonance frequency is 23658.6Hz,the linear measurement range is±135g,and the sensitivity of the sens⁃ing system is 161.61 nm/g with an operating bandwidth of 0~23.6kHz.