氧化钨-氧化锌忆阻器的制备及其神经突触特性

Preparation of Tungsten Oxide-Zinc Oxide Memristor and Its Neural Synaptic Property

为了实现忆阻器在神经形态计算中的应用,采用射频磁控溅射技术,在氧化铟锡导电玻璃衬底上依次生长氧化钨、氧化锌异质结的阻变层和银顶电极,制备氧化钨-氧化锌忆阻器,对制得忆阻器的结构、化学组成及电学性能进行表征和测试。结果表明:制得的忆阻器具有类似生物的神经突触特性,阻变行为由界面势垒调控机制主导作用;制得的忆阻器交叉阵列用于分类识别的平均正确率达到86.3%,接近中央处理器网络的平均正确率87.4%,可用于神经形态计算。

To realize application of memristors in neuromorphic computation,resistive layers of tungsten oxide and zinc oxide heterogeneous junction as well as a silver top electrode were grown on an indium tin oxide conductive glass substrate by using radio frequency magnetron sputtering technology,and a tungsten oxide-zinc oxide memristor was prepared.Structure,chemical composition,and electrical properties of the prepared memristor were characterized and tested.The results show that the prepared memristor has neural synaptic property similar to biology,and the resistive behavior is dominated by interfacial barrier regulation mechanism.The average accuracy of the prepared memristor cross array for classification recognition is 86.3%,which is close to that of central processing unit network 87.4%,and it can be used for neuromorphic computation.