顶部籽晶溶液法生长碳化硅单晶及其关键问题研究进展

Research Progress on the Growth of Silicon Carbide Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues

因其优异的物理特性,第三代半导体碳化硅(SiC)材料在高温、高频、高压及大功率电力电子器件和射频微波器件领域具有非常明确的应用前景。受限于自身技术特点,利用传统的物理气相输运(PVT)法制备SiC晶体仍面临许多技术挑战,难以满足当前电子器件对大尺寸、高质量和低成本SiC单晶衬底的迫切需求。顶部籽晶溶液(TSSG)法可以在更低的温度和近热力学平衡条件下实现SiC晶体制备,能够显著弥补PVT法的不足,正逐渐成为极具竞争力的低成本、高质量SiC单晶衬底创新技术之一。本文首先阐述了TSSG法生长SiC晶体的理论依据,并给出了各工艺环节要点,然后归纳了TSSG法生长SiC晶体的主要技术优势,梳理了国内外在该技术领域的研究现状并重点讨论了TSSG法生长SiC晶体关键技术问题、产生机制,以及可能的解决途径等。最后,对TSSG法生长SiC晶体的未来发展做出展望。

Due to its excellent physical properties,the third-generation semiconductor silicon carbide(SiC)material has very clear application prospects in the fields of high-temperature,high-frequency,high-pressure,and high-power electronics and RF microwave devices.Limited by its own technical characteristics,using traditional physical vapor transport(PVT)method to prepare SiC crystals still faces many technical challenges,making it difficult to meet the urgent demand for large-size,high-quality,and low-cost SiC single crystal substrates in current electronic devices.Top seed solution(TSSG)can be used to prepare SiC crystal at lower temperatures and near thermodynamic equilibrium conditions,which significantly compensate for the shortcomings of PVT method.TSSG method is gradually becoming one of the highly competitive innovation technologies for low-cost,high-quality SiC single crystal substrate.Firstly,the basic theory of TSSG method for SiC crystals growth is introduced,and the key points of each process are given.Then the main technical advantages of TSSG method are summarized and the research status at home and abroad are reviewed.Furthermore,the key technical issues,mechanisms,and possible solutions for the growth of SiC crystals by TSSG method are discussed.Finally,the future development of TSSG method for growing SiC crystal is given.