施主掺杂提高ZnO压敏电阻的冲击稳定性

Improvement in Impact Stability of ZnO Varistors through Donor Doping

研究了铝铟共掺杂对ZnO压敏电阻的微观结构和电学性能的影响,特别是浪涌冲击稳定行为。采用X射线衍射、扫描电子显微镜对ZnO压敏电阻的微观结构进行了表征,通过电流—电压测试、脉冲电流冲击测试和电容—电压测试对电性能进行了评估。结果表明:当Al^(3+)和In^(3+)掺杂量分别为0.0008 mol%和0.0033 mol%时,ZnO压敏电阻表现出了最佳的电性能;此时的电位梯度为95.3 V·mm^(-1)、非线性系数为74、残压比为2.43。另外,ZnO压敏电阻在8/20μs 10 k A电流下冲击20次后,正反压敏电压变化率分别为+3.30%和-6.67%。

The effects of aluminum indium codoping on the microstructure and electrical properties of ZnO varistors,especially the surge impact stability,were studied.The microstructure was characterized by using X-ray diffraction(XRD)and scanning electron microscopy(SEM).The electrical properties were evaluated by using current-voltage test,pulsed current impulse test and capacitance-voltage test.The sample doped with 0.0008 mol%Al^(3+)and 0.0033 mol%In^(3+)exhibited excellent electrical properties,with breakdown voltage gradient of 95.3 V·mm^(-1),nonlinear coefficient of 74 and residual voltage ratio of 2.43.In addition,after 20 shocks at 8/20μs 10 kA current,the positive and negative voltage change rates were+3.30%and−6.67%,respectively.