不间断电源晶体管用交联聚亚胺硅氧烷绝缘材料的制备及其性能研究

Study on the Preparation and Properties of Crosslinked Polyimide Siloxane Insulating Materials for Uninterruptible Power Transistors

合成了一种具有增强热稳定性和降低热导率的新型绝缘材料。首先制备了聚(亚胺硅氧烷)PIS,并通过硅氢化反应交联得到半固态交联PIS。研究了交联PIS的热分解温度、导热系数、光学透明度和介电常数,并与商用晶体管硅凝胶进行了比较。交联PIS的T_(5)和T_(10)值分别为416℃和454℃,商用硅凝胶的T5和T10值分别为378℃和422℃,表明交联PIS的热稳定性高于商用硅凝胶。交联PIS的导热系数为0.11 W/m·K,远低于商用硅凝胶的导热系数(0.19 W/m·K)。此外,交联PIS的介电常数为2.11,是一种低介电材料,在550 nm处表现出超过90%的高透光率。基于这些特性,交联PIS可以用作不间断电源晶体管的绝缘层。

A new insulating material with enhanced thermal stability and reduced thermal conductivity has been synthesized.Firstly,the poly(imide siloxane)is prepared and cross-linked by hydrosilylation to obtain semi-solid cross-linked PIS.The thermal decomposition temperature,thermal conductivity,optical transparency and dielectric constant of crosslinked PIS are studied and compared with commercial silicon gels.The T_(5) and T_(10) values of cross-linked PIS are 416℃and 454℃,respectively,and the T5 and T10 values of commercial silicon gels are 378℃ and 422℃,respectively,indicating that the thermal stability of cross-linked PIS is better than that of commercial silicon gels.The thermal conductivity of crosslinked PIS is 0.11 W/m·K,which is much lower than that of commercial silicon gels(0.19 W/m·K).In addition,the crosslinked PIS is a low dielectric material with a dielectric constant of 2.11,and it exhibits a high transmittance of over 90%at 550 nm.Based on these properties,the crosslinked PIS can be used as an insulating layer for the uninterruptible power transistors.