Ⅰ型倍增层对异质SAM结构InSb-APD红外探测器性能的影响

Effect of type I multiplier layer on performance of InSb-APD infrared detector with heterogeneous SAM structure

红外探测器的光电特性会受到内部结构倍增层参数的影响,为了能够改善器件的雪崩效应,借助仿真软件Silvaco-TCAD,详细探讨了Ⅰ型倍增层的残余掺杂浓度和厚度对异质SAM结构InSb-APD红外探测器性能的影响。研究结果表明,随着Ⅰ型倍增层掺杂浓度的增加,其倍增层内的电场强度峰值增加,同时光响应度略微增加;随着Ⅰ型倍增层厚度的增加,其倍增层的光响应度与暗电流密度升高,同时电场强度峰值减少。进一步研究表明,当Ⅰ型倍增层残余掺杂浓度和厚度分别为1×10^(15)cm^(−3)和3μm时,有利于雪崩过程。

The photoelectric properties of the infrared detector will be affected by the multiplier layer parameters of the internal structure.In order to improve the avalanche effect of the device,the effect of residual doping concentration and thickness of type I multiplier layer on the performance of InSb-APD infrared detector with heterogeneous SAM structure was investigated in detail with the simulation software Silvaco-TCAD.The results show that as the doping concentration of type I multiplier layer increases,the peak electric field intensity within its multiplier layer increases,and the optical responsivity increases slightly.The increase of the thickness of type I multiplier layer rises the optical responsivity and dark current density of its multiplier layer,and the peak electric field intensity decreases.Further studies show that the avalanche process is favored when the residual doping concentration and thickness of the type I multiplier layer are 1×10^(15)cm^(−3)and 3μm,respectively.