基于GaN纳米薄膜的室温三甲胺气体传感器

Room temperature trimethylamine gas sensor based on GaN nanofilm

三甲胺在实验室和工业生产中被广泛使用,由于其具有毒性和挥发性,开发能够在室温下对其进行检测的传感器尤为重要。采用气喷旋涂和高温氮化的方法制备出GaN纳米薄膜,再利用磁控溅射仪对薄膜的两端溅射覆盖一层金作为电极制作成气体传感器单元并进行了一系列气敏测试。在室温条件下,GaN纳米薄膜传感器对10ppm三甲胺的响应值为2.54,响应/恢复时间分别为41 s和139 s,检测下限为1ppm。传感器在1ppm~50ppm三甲胺浓度范围内也呈现出良好的线性响应,并具有优异的重复性、稳定性和选择性。GaN纳米薄膜传感器的表面堆积覆盖有许多的纳米颗粒,形成的独特结构有利于气体分子的吸附。纳米薄膜表面存在大量的化学吸附氧,使得传感器对三甲胺展现出良好的传感性能。

Trimethylamine is widely used in the industrial production and laboratory.Due to its toxicity and volatility,it is particularly important to develop sensors that can detect it at room temperature.The GaN nanofilm was prepared using gas spraying and high temperature nitriding techniques.Using a magnetron sputtering,the nanofilm was then coated with gold on both ends as the electrode to create the gas sensor.The GaN nanofilm sensor exhibits a response value of 2.54ppm-10ppm of trimethylamine,with respective response and recovery times of 41 s and 139 s,respectively.The detection limit of the sensor is 1 ppm,and the sensor also shows a good linear response in the range of 1ppm-50ppm trimethylamine concentration.In addition,the sensor also performs well in the repeatability,stability and selectivity tests.The surface of the GaN nanofilm sensor is coated with numerous nanoparticles,forming a unique structure that facilitates the adsorption of gas molecules.The presence of a significant quantity of chemisorbed oxygen on the nanofilm surface contributes to the exceptional trimethylamine sensitivity of the sensor.