摘要
The performance of red InP and blue ZnTeSe-based quantum dots(QDs)and corresponding QD light emitting diodes(QLEDs)has already been improved significantly,whose external quantum efficiencies(EQEs)and luminances have exceeded 20%and 80000 cd m-2,respectively.However,the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology.The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield(PL QY)of the InP-based core/shell QDs,limiting the performance of the relevant QLEDs.Here,we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores,in which zinc myristate reacted with phosphine dangling bonds to form Zn–P protective layer and protect InP cores from the water and oxygen in the environment.The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%.The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%,along with a luminance of over 175000 cd m^(-2)and a long T50@100 cd m^(-2)lifetime of over 20000 h.
基金
the National Natural Science Foundation of China(Grant Nos.62204078 and U22A2072)
the Natural Science Foundation of Henan Province for Excellent Youth Scholar(Grant No.232300421092).
