不同封装结构SiC MOSFET的开关振荡分析

Switching Oscillation Analysis of SiC MOSFET With Different Packaging Structures

此处分析了不同封装结构碳化硅金属-氧化物半导体场效应晶体管(SiC MOSFET)在开关过程中振荡的产生原因和影响因素。首先建立简化电路模型,准确计算出开关稳态后电压振荡的时域表达式,该电路模型考虑了器件的相关性能参数、器件和电路中的寄生参数。其次通过Matlab软件对模型中的时域表达式进行波形拟合。最后搭建了双脉冲测试平台,实验验证了模型的精确性,也具体量化了不同参数对开关振荡的影响。

The causes and influencing factors of oscillation in silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFET)with different packaging structures during the switching process are analyzed.Firstly,a simplified circuit model is established to accurately calculate the time-domain expression of voltage oscillation after the switch is in stable state.This circuit model considers the relevant performance parameters of the device,as well as parasitic parameters in the device and circuit.Secondly,waveform ftting is performed on the time-domain expressions in the model using Matlab software.Finally,a double-pulse test plaform is built to verify the accuracy of the model and quantify the effect of different parameters on the switching oscillation.