非制冷PbSe中红外光导探测器的研究现状与发展趋势

Research Status and Development Trend of Uncooled PbSe Mid-Infrared Photo-Conductive Detectors

从类型来看,PbSe属于窄禁带直接带隙半导体材料。在室温条件下,其探测性能类似于制冷型光子红外探测材料。然而,目前PbSe探测器的两种标准制造工艺仍存在技术瓶颈,难以制备出大面积、高性能的PbSe光敏薄膜,导致大面阵、高性能PbSe红外成像系统尚未实现商业化生产。此外,诱发和提升PbSe薄膜红外探测能力的敏化机制和光电探测机理仍未明确,无法对晶圆级PbSe薄膜的敏化过程提供精确、量化的指导。这样也就对进一步优化与提升PbSe红外探测器的性能形成了制约。基于PbSe红外探测器的发展历程,归纳与总结了PbSe红外探测器的器件结构、制备工艺、探测机理等方面的研究成果,并预测了PbSe红外探测器未来的发展趋势。

From the type point of view,PbSe belongs to narrow gap direct band gap semiconductor materials.At room temperature,its detection performance is similar to that of cooled photonic infrared detection materials.However,at present,there are still technical bottlenecks in the two standard manufacturing processes of PbSe detectors,and it is difficult to prepare large-area,high-performance PbSe photosensitive films.Therefore large array,high-performance PbSe infrared imaging systems have not been commercialized.In addition,the sensitization mechanism and photoelectric detection mechanism that induce and improve the infrared detection ability of PbSe thin films are still unclear,and the accurate and quantified guidance for the sensitization process of wafer-level PbSe thin films cannot be provided.This restricts the further optimization and improvement of the performance of the PbSe infrared detector.Based on the development history of PbSe infrared detector,the research results of device structure,preparation technology and detection mechanism of PbSe infrared detector are summarized,and the future development trend of PbSe infrared detector is predicted.