SiO_(2)掺杂量对SnO_(2)压敏电阻电气性能的影响

Effect of SiO_(2)Doping Amount on Electrical Performance of SnO_(2)Varistor

采用传统方法制备了掺杂不同物质的量分数(0.01%,0.05%,0.10%,0.15%,0.20%)SiO_(2)的SnO_(2)压敏电阻,研究了SiO_(2)掺杂量对SnO_(2)压敏电阻电气性能的影响。结果表明:随着SiO_(2)掺杂量的增加,SnO_(2)压敏电阻的电压梯度、非线性系数、势垒高度、施主密度和界面态密度均先增大后减小,泄漏电流密度先减小后增大,晶界电阻增大;当SiO_(2)物质的量分数为0.10%时,SnO_(2)压敏电阻的综合电气性能最佳,其电压梯度、非线性系数、施主密度、界面态密度、势垒高度最大,泄漏电流密度最小,分别为582 V·mm^(-1),33,1.7×10^(23)m-3,6.7×10^(16)m^(-2),2.03 eV,7.06μA·cm^(-2)。

SnO_(2)varistor doped with SiO_(2)of different mole fractions(0.01%,0.05%,0.10%,0.15%,0.20%)was prepared by traditional method.The effect of SiO_(2)doping amounts on the electrical performance of SnO_(2)varistor was studied.The results show that with the increase of SiO_(2)doping amounts,the voltage gradient,nonlinear coefficient,barrier height,donor density and interfacial state density of SnO_(2)varistor first increased and then decreased,the leakage current density first decreased and then increased,and the grain boundary resistance increased.When the mole fraction of SiO_(2)was 0.10%,the SnO_(2)varistor had the best comprehensive electrical performance,with the largest voltage gradient,nonlinear coefficient,donor density,interfacial state density and the barrier height,and the smallest leakage current density,which were 582 V·mm^(-1),33,1.7×10^(23)m^(-3),6.7×10^(16)m^(-2),2.03 eV,7.06μA·cm^(-2),respectively.