高密度电容器件的制备及其可靠性

Preparation and Reliability of High Capacitance Density Capacitor

介绍了一种基于微机械加工技术(MicroElectronMechanical System,MEMS)的硅基高密度电容芯片的制备方法。该电容芯片采用了深孔刻蚀、介质淀积生长以及原位掺杂多晶硅等工艺技术,实现了高击穿电压(50V@1μA)、高电容密度(38.8~39.5nF/mm^(2))的电容芯片制备。

A manufacturing technology of high capacitance density capacitor based on micro-electron-mechanical system technology is introduced.The deep trench etching,dielectric depositing and in-situ doped poly silicon technologies are applied,and the capacitor chip with high breakdown voltage(50 V@1µA leakage current)and high capacitance density(38.8~39.5 nF/mm^(2))is achieved.