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基于Nb掺杂Co_(3)O_(4)的高性能对二甲苯气体传感器

High Performance P-Xylene Gas Sensor Based on Nb Doped Co_(3)O_(4)
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摘要 p型Co_(3)O_(4)具有优异的挥发性有机化合物(VOC)催化氧化活性,但其在空气中呈现空穴累积层(HAL)构型,导致本征Co_(3)O_(4)传感器的VOC响应较弱。利用共沉淀法合成了0~5%Nb掺杂的Co_(3)O_(4)纳米材料,缺陷与形貌表征结果表明高价Nb掺杂剂可诱导p型Co_(3)O_(4)发生晶格畸变及形貌改变,为对二甲苯气敏特性的提升发挥了重要作用。气敏测试结果表明:在最佳工作温度150℃下,3%Nb-Co_(3)O_(4)传感器对体积分数为100×10^(-6)的对二甲苯的响应从1.3(纯Co_(3)O_(4))提高到14;其选择性也得到了改善,可通过线性判别分析(LDA)准确识别9种不同气体。在为期15 d的稳定性测试中,其性能未有明显衰减。3%Nb-Co_(3)O_(4)表现出优异的对二甲苯传感器特性,为高性能p型金属氧化物半导体VOC传感器的设计提供了参考。 The p-type Co_(3)O_(4) has excellent catalytic oxidation activity for volatile organic compounds(VOCs),but it exhibits a hole-accumulating layer(HAL) conformation in air, which leads to a weak VOC response of intrinsic Co_(3)O_(4) sensors.A series of Nb doped(0-5%) Co_(3)O_(4) nanomaterials were synthesized by using co-precipitation method.Defect and morphology characterization results show that the high-valence Nb dopant induces lattice distortion and morphology change in p-type Co_(3)O_(4),which plays an important role in the enhancement of p-xylene gas sensitivity.The gas sensitivity test results show that the response of the 3%Nb-Co_(3)O_(4) sensor to p-xylene with a volume fraction of 100×10^(-6) is improved from 1.3(pure Co_(3)O_(4)) to 14 at an optimal operating temperature of 150 ℃.The selectivity is also improved, and nine different gases can be accurately recognized by linear discriminant analysis(LDA).There is no significant degradation in the 15 d stability test.3%Nb-Co_(3)O_(4) exhibits excellent p-xylene sensing properties, which provides reference for the design of high performance p-type metal oxide semiconductor VOC sensors.
作者 冀小华 曹开法 李蒙 邓赞红 孟钢 Ji Xiaohua;Cao Kaifa;Li Meng;Deng Zanhong;Meng Gang(Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China;Anhui Institute of Optics and Fine Mechanics,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China;Anhui Kechuang Zhongguang Technology Co.,Ltd.,Hefei 230088,China)
出处 《半导体技术》 CAS 北大核心 2024年第6期524-530,共7页 Semiconductor Technology
基金 国家自然科学基金面上项目(52372162,62374166) 中国科学院与泰国科技发展署联合研究项目(GJHZ202101)。
关键词 气体传感器 Nb掺杂Co_(3)O_(4) 选择性 气体响应 对二甲苯 gas sensor Nb-doped Co_(3)O_(4) selectivity gas response p-xylene
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