基于Back-n白光中子实验装置的SRAM翻转截面测量

Measurement of Single Event Upset Cross Section of Static Random Access Memories at the CSNS Back-n Facility

本文主要研究静态随机存取存储器(static random-access memory,SRAM)的单粒子效应翻转截面的测量方法。基于宽能谱白光中子束流,采用了一种操作更方便的SRAM翻转截面测量方法。在SRAM前面放置聚乙烯中子慢化材料改变入射到SRAM表面上的中子能谱,利用模拟计算得到改变后的中子能谱。利用奇异值分解法求解翻转率的矩阵方程得到SRAM的翻转截面。结果表明在4~15 MeV的能量范围内,使用反角白光中子源测试的SRAM翻转截面信息和参考文献中使用单能中子源测试拟合的SRAM翻转截面信息基本吻合。

In this paper,a more convenient method for measuring the single event upset(SEU)cross section of SRAM at the CSNS Back-n facility is proposed.According to the placement of polyethylene neutron moderating material in front of the SRAM,the energy spectrum of neutron incident on the surface of the SRAM is changed,and the changed neutron energy spectrum is obtained by simulation.The SEU cross section of SRAM is obtained by solving the matrix equation of the upset rate by singular value decomposition method.The results show that in the energy range of 4 MeV to 15 MeV,the SEU cross section information of SRAM measured at the CSNS Back-n facility and fitted with monoenergic neutron source in the references is basically consistent.